Analog Filters in Nanometer CMOS by Heimo Uhrmann

By Heimo Uhrmann

Starting from the fundamentals of analog filters and the bad transistor features in nanometer CMOS 10 high-performance analog filters built by way of the authors in a hundred and twenty nm and sixty five nm CMOS are defined commonly. between them are gm-C filters, current-mode filters, and energetic filters for system-on-chip cognizance for Bluetooth, WCDMA, UWB, DVB-H, and LTE functions. For the energetic filters a number of operational amplifier designs are defined. The ebook, moreover, includes a assessment of the latest kingdom of analysis on low-voltage low-power analog filters. to hide the subject of the ebook comprehensively, linearization concerns and size equipment for the characterization of complicated analog filters are brought additionally. quite a few complicated illustrations advertise a simple comprehension. This ebook may be of worth to engineers and researchers in in addition to scientists and Ph.D scholars at universities. The e-book can also be recommendable to graduate scholars specializing on nanoelectronics, microelectronics or circuit engineering.

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This results in a 10-times higher unity-gain frequency than the filter cut-off frequency. 8) is 10. 7 dB. But it should be taken into account that the transit frequency of the operational amplifiers should be at least 10 times larger than the filter cut-off frequency which means that the current consumption will increase at higher frequencies. In [71] another technique to enhance the linearity of an OTA is presented. It is based on the cancellation of two differently biased cross-coupled differential pairs (see Fig.

The circuit for the digitally programmable concept is shown in Fig. 18. At the output two other output stages with controlled cascodes are in parallel which can be 54 5 Gm -C Filters Fig. 19 Realized chip Fig. 20 DC-transfer characteristics for the case of maximum gain and minimum gain activated by a digital signal. If the transistor Mdata is turned on, the cascode with the transistor Mcasc5 is not activated and so no current flows through it. In addition, this avoids having to insert switches in the high-frequency signal path.

Active devices are separated by a shallow trench isolation (STI). Stress engineered devices are offered and the stress is caused by the location and the dimension of the STI. Mechanical stress increases the carrier mobility in p-channel MOSFETs and deteriorates the carrier mobility in n-channel MOSFETs [79]. 22 3 CMOS Technology Fig. 32 V. The technology cross section of the 65 nm CMOS process is shown in Fig. 8. It should be noted that the aspect ratios are not displayed correctly. The process uses a P-substrate, wherein N-well, Pwell, and a deep N-well are embedded.

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